Referenced Items are not available for this document.
A 1.9-GHz Si power MOSFET with 50% power-added efficiency and 0.3-1.0 W output power at a 3-5 V supply voltage has been developed for use as a high-power amplifier in cellular telephones. This MOSFET achieves high efficiency and high-power gain at low supply voltage by using a 0.5-μm gate power MOSFET with an Al-shorted metal-silicide/Si gate structure, which improves the cut-off frequency and reduces the on-state resistance
Published in:
Electron Devices, IEEE Transactions on
(Volume:45
,
Issue:
4
)
Date of Publication: Apr 1998
- Page(s):
- 953 - 956
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5886123
- Digital Object Identifier :
- 10.1109/16.662810
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Apr 1998
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
