Referenced Items are not available for this document.
In this paper it is demonstrated in a wide stress field range that breakdown in thin oxide layers occurs as soon as a critical density of neutral electron traps in the oxide is reached. It is proven that this corresponds to a critical hole fluence, since a unique relationship between electron trap generation and hole fluence is found independent of stress field and oxide thickness. In this way literature models relating breakdown to hole fluence or to trap generation are linked. A new model for intrinsic breakdown, based on a percolation concept, is proposed. It is shown that this model can explain the experimentally observed statistical features of the breakdown distribution, such as the increasing spread of the QBD-distribution for ultrathin oxides. An important consequence of this large spread is the strong area dependence of the QBD for ultrathin oxides
Published in:
Electron Devices, IEEE Transactions on
(Volume:45
,
Issue:
4
)
Date of Publication: Apr 1998
- Page(s):
- 904 - 911
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5886116
- Digital Object Identifier :
- 10.1109/16.662800
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Apr 1998
- Sponsored by :
- IEEE Electron Devices Society
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