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Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm

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3 Author(s)
Chung-Kuang Huang ; Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA ; W. E. Zhang ; C. H. Yang

We present simulation results of a silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET), which has a structure similar to that of a conventional MOSFET, but the source and drain regions are now entirely replaced by metals. By using abrupt metal/silicon Schottky junctions, short-channel effects are avoided. Based on a few commonly used physical assumptions, we have calculated the transistor characteristics, and we find that this new three-terminal transistor can offer gain and impedance isolation, desirable for logic circuit applications

Published in:

IEEE Transactions on Electron Devices  (Volume:45 ,  Issue: 4 )