Referenced Items are not available for this document.
We present simulation results of a silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET), which has a structure similar to that of a conventional MOSFET, but the source and drain regions are now entirely replaced by metals. By using abrupt metal/silicon Schottky junctions, short-channel effects are avoided. Based on a few commonly used physical assumptions, we have calculated the transistor characteristics, and we find that this new three-terminal transistor can offer gain and impedance isolation, desirable for logic circuit applications
Published in:
Electron Devices, IEEE Transactions on
(Volume:45
,
Issue:
4
)
Date of Publication: Apr 1998
- Page(s):
- 842 - 848
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5886108
- Digital Object Identifier :
- 10.1109/16.662789
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Apr 1998
- Sponsored by :
- IEEE Electron Devices Society
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