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An analytical fully-depleted SOI MOSFET model considering the effects of self-heating and source/drain resistance

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2 Author(s)
Man-Chun Hu ; Dept. of Electron. Eng., Nat. Taiwan Inst. of Technol., Taipei, Taiwan ; Sheng-Lyang Jang

In this paper, we present a new and analytical drain current model for submicrometer SOI MOSFET's applicable for circuit simulation. The model was developed by using a two-dimensional (2-D) Poisson equation, and considering the source/drain resistance and the self-heating effect. Using the present model, we can clearly see that the reduction of drain current with the parasitic series resistance and self-heating effect for typical SOI devices. We also can evaluate the impact of series resistance and self-heating effects. The accuracy of the presented model has been verified with the experimental data of SOI MOS devices with various geometries

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Electron Devices, IEEE Transactions on  (Volume:45 ,  Issue: 4 )