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High-performance 670-nm AlGaInP/GaInP visible strained quantum well lasers

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5 Author(s)
Su, Y.K. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Li, W.L. ; Chang, S.J. ; Chang, C.S.
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We have grown high-performance AlGaInP/GaInP visible (670 mn) strained quantum well lasers by low-pressure metalorganic chemical vapor deposition. With AlInP cladding layer, a high-power AlGaInP/GaInP visible laser diode is achieved. Its threshold current is about 30 mA. The output power of this laser diode can maintain, at least, at 32 mW under continuous-wave (CW) operation at room temperature. High slope efficiency (0.8 mW/mA) and differential quantum efficiency (0.87) can be achieved. To improve beam quality, AlGaInP/GaInP visible lasers with and without depressed index cladding layer are theoretically and experimentally studied. From experimental results, the transverse beam divergence can be reduced from 41.4° to 26.2° while maintaining a low threshold current (from 36 mA to 46 mA). By using the transfer matrix method, our theoretical calculations are in good agreement with the experimental results

Published in:

Electron Devices, IEEE Transactions on  (Volume:45 ,  Issue: 4 )

Date of Publication:

Apr 1998

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