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Stacked silicon CMOS circuits with a 40-Mb/s through-silicon optical interconnect

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7 Author(s)
Vendier, O. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Bond, S.W. ; Myunghee Lee ; Sungyung Jung
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Optical interconnection through stacked silicon foundry complementary metal-oxide-semiconductor (CMOS) circuitry has been demonstrated at a data rate of over 40 Mb/s with an open eye diagram. The system consists of a 0.8-μm transmitter and receiver realized in foundry digital CMOS. The use of digital CMOS enables on-chip integration with more complex digital systems, such as a microprocessor. Two layers of these circuits were integrated with thin-film InP-based light emitting diodes and metal-semiconductor-metal photodetectors operating at 1.3 μm (to which the silicon is transparent) to enable vertical optical through-Si-communication between the stacked silicon circuits.

Published in:

Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 4 )