By Topic

Single-mode AlGaAs-GaAs lasers using lateral confinement by native-oxide layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Heerlein, J. ; Dept. of Optoelectron., Ulm Univ., Germany ; Grabherr, M. ; Jager, R. ; Unger, P.

We report on results of wet oxidized narrow-stripe QW laser diodes operating in single lateral and longitudinal mode around an emission wavelength of 850 nm. Devices with an active width of 4-10 μm achieved output powers of up to 240 mW in continuous-wave (CW) operation at room temperature.

Published in:

Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 4 )