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Self-aligned, gated field emitter arrays with integrated high-aspect-ratio current limiters

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2 Author(s)
Guerrera, S.A. ; Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Akinwande, A.I.

We report the fabrication of arrays of silicon field emitters with 1-micron pitch with integrated, self-aligned extractor gates and 10-micron tall high-aspect-ratio silicon vertical current limiters.

Published in:

Vacuum Nanoelectronics Conference (IVNC), 2013 26th International

Date of Conference:

8-12 July 2013