Referenced Items are not available for this document.
This paper is concerned with the investigation of lateral current spreading in InGaAsP strained-layer, ridge-waveguide multiple-quantum-well (MQW) semiconductor lasers consisting of nine quantum wells (QWs) and having ridge widths varying from 1.5 to 5 μm. By using a simple analytical model, it is possible to demonstrate that as much as 60% of the injected current escapes out of the active region of a 1.5-μm laser at threshold. For the first time, such an analysis is extended into the above-threshold regime to examine the effects of lateral current spreading on the external differential efficiency
Published in:
Quantum Electronics, IEEE Journal of
(Volume:34
,
Issue:
3
)
Date of Publication: Mar 1998
- Page(s):
- 512 - 518
- ISSN :
- 0018-9197
- INSPEC Accession Number:
- 5866379
- Digital Object Identifier :
- 10.1109/3.661460
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Mar 1998
- Sponsored by :
- IEEE Photonics Society
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