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Determination of active-region leakage currents in ridge-waveguide strained-layer quantum-well lasers by varying the ridge width

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4 Author(s)
Letal, G.J. ; Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada ; Simmons, J.G. ; Evans, J.D. ; Li, G.P.

This paper is concerned with the investigation of lateral current spreading in InGaAsP strained-layer, ridge-waveguide multiple-quantum-well (MQW) semiconductor lasers consisting of nine quantum wells (QWs) and having ridge widths varying from 1.5 to 5 μm. By using a simple analytical model, it is possible to demonstrate that as much as 60% of the injected current escapes out of the active region of a 1.5-μm laser at threshold. For the first time, such an analysis is extended into the above-threshold regime to examine the effects of lateral current spreading on the external differential efficiency

Published in:

Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 3 )