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Mixed signal integrated circuits based on GaAs HEMTs

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21 Author(s)
A. Thiede ; Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany ; Zhi-Gong ; M. Schlechtweg ; M. Lang
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During the past five years numerous mixed signal integrated circuits (ICs) have been designed, processed, and characterized based on our 0.2 /spl mu/m gate length AlGaAs/GaAs quantum well HEMT technology. Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gb/s optoelectronic data transmission systems, 15 and 34 GHz PLLs, a 35 GHz phase shifter for phased array antenna applications, a 2-kb ROM with subnanosecond access time for direct digital signal synthesis, and a 6-k gate array.

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IEEE Transactions on Very Large Scale Integration (VLSI) Systems  (Volume:6 ,  Issue: 1 )