By Topic

Process integration of an interlevel dielectric (ILDO) module using a building-in reliability approach

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

16 Author(s)
Paulsen, R.E. ; Motorola Inc., East Kilbride, UK ; Kyono, C.S. ; Wang, Y. ; Klein, K.M.
more authors

Process integration is approached from a built-in reliability perspective in order to develop a pre-metal inter-level dielectric (ILDO) module which may be integrated into a submicron CMOS process with embedded nonvolatile memory. The approach involves developing a fundamental understanding of the process parameters that modulate parasitics and impact reliability. The benefit of such an approach is a relatively simple process integration while achieving a highly manufacturable and reliable process. Several ILDO films have been characterized to understand the physical and chemical composition, process parameter dependencies, and gettering properties in order to define a process window from which to integrate the most manufacturable process

Published in:

Electron Devices, IEEE Transactions on  (Volume:45 ,  Issue: 3 )