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A>400 GHz fmax transferred-substrate heterojunction bipolar transistor IC technology

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7 Author(s)
Q. Lee ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; B. Agarwal ; D. Mensa ; R. Pullela
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We report transferred-substrate AlInAs/GaInAs bipolar transistors. A device having a 0.6 μm×25 μm emitter and a 0.8 μm×29 μm collector exhibited f/sub /spl tau//=134 GHz and fmax>400 GHz. A device with a 0.6 μm×25 μm emitter and a 1.8 μm×29 μm collector exhibited 400 GHz fmax 164 GHz f/sub /spl tau//. The improvement in fmax over previous transferred-substrate HBT's is due to improved base Ohmic contacts, narrower emitter-base and collector-base junction areas, and slightly reduced transit times. The transferred-substrate fabrication process provides electroplated gold thermal vias for transistor heat-sinking and a microstrip wiring environment on a low dielectric constant polymer substrate.

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IEEE Electron Device Letters  (Volume:19 ,  Issue: 3 )