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Evaluation of plasma charging damage in ultrathin gate oxides

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8 Author(s)
Horng-Chih Lin ; Nat. Nano Device Labs., Hsinchu, Taiwan ; Chi-Chun Chen ; Chao-Hsing Chien ; Szu-Kang Hsein
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Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 mm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.

Published in:

Electron Device Letters, IEEE  (Volume:19 ,  Issue: 3 )

Date of Publication:

March 1998

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