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Comparison of integrated in situ RIE preclean processes for CVD tungsten silicide deposition done in a cluster tool

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3 Author(s)
R. S. Nowicki ; Genus Inc., Mountain View, CA, USA ; C. Fuhs ; P. Geraghty

Summary form only given. The authors describe a predeposition clean in which reactive ion etching (RIE) prior to tungsten silicide deposition is used. This technique yields silicide films which can easily withstand postsilicide deposition, high-temperature heat treatment, and wet oxidation without loss of film adhesion or other obvious degradation. The authors also report the extensive use of the secondary ion mass spectrometry (SIMS) microanalytical technique to demonstrate that this procedure has indeed been effective in the removal of the oxide layer prior to silicide deposition. The etch properties for C2F6 and CF4 have been compared

Published in:

Semiconductor Manufacturing Science Symposium, 1990. ISMSS 1990., IEEE/SEMI International

Date of Conference:

21-23 May 1990