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Reliability simulator for interconnect and intermetallic contact electromigration

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4 Author(s)
Liew, B.K. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Fang, P. ; Cheung, N.W. ; Hu, C.

A previously developed model for predicting interconnect electromigration time-to-failure under arbitrary current waveforms is shown to be applicable to Al-W intermetallic contacts as well. This model is incorporated in a circuit electromigration reliability simulator which can (1) generate layout advisory for width and length of each interconnect, the safety factor of each contact and via in a circuit to meet user-specified reliability requirements and (2) estimate the overall circuit electromigration failure rate and/or cumulative percent failure.<>

Published in:

Reliability Physics Symposium, 1990. 28th Annual Proceedings., International

Date of Conference:

27-29 March 1990