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Gate Unit With Improved Short-Circuit Detection and Turn-Off Capability for 4.5-kV Press-Pack IGBTs Operated at 4-kA Pulse Current

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4 Author(s)
Gerber, D. ; Lab. for High Power Electron. Syst., ETH Zurich, Zurich, Switzerland ; Guillod, T. ; Leutwyler, R. ; Biela, J.

This paper presents a gate unit with short-circuit protection for a 4.5-kV press-pack insulated gate bipolar transistor (IGBT) designed for pulsed applications and operated at a pulse current of 4 kA and the results of short-circuit tests performed with the mentioned switch and the gate unit. Initially, an overview of the gate unit, the implemented gate boosting as well as the two-stage turn-off and active clamping is given. An over- di/dt as well as an over-current detection using a printed circuit board (PCB) Rogowski coil is used in the gate drive to protect the IGBT during operation. Then, the design of the PCB Rogowski coil is introduced including partial element equivalent circuit simulations to predict the coil parameters. Measurements were made to verify these simulations. Afterward, two types of short-circuit tests were performed. First, the over- di/dt detection was tested by turn-on into a short circuit. The tests show that the over- di/dt detection reacts very fast. The IGBT was always able to turn off the short-circuit current. The maximum short-circuit current was 4.4 kA. Second, tests using an auxiliary switch were made to investigate the short-circuit events during pulse top. The IGBT was able to turn off a maximum short-circuit current of 8.7 kA.

Published in:

Plasma Science, IEEE Transactions on  (Volume:41 ,  Issue: 10 )