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Fully Ion-Implanted and Screen-Printed 20.2% Efficient Front Junction Silicon Cells on 239 cm ^{\bf 2} n-Type CZ Substrate

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8 Author(s)
Yuguo Tao ; Georgia Inst. of Technol., Atlanta, GA, USA ; Young-Woo Ok ; Zimbardi, F. ; Upadhyaya, A.D.
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In this study, we present fully ion-implanted screen-printed high-efficiency 239 cm2 n-type silicon solar cells that are fabricated on pseudosquare Czochralski wafers. Implanted boron emitter and phosphorous back-surface field (BSF) were optimized to produce n-type front junction cells with front and back SiO2 /SiNx surface passivation and rear point contacts. Average efficiency of 19.8%, with the best efficiency of 20.2%, certified by Fraunhofer ISE, Freiburg, Germany, was achieved. In addition, the planarized rear side gave better surface passivation, in combination with optimized BSF profile, raised the average efficiency to ~20% for the fully implanted and screen-printed n-type passivated emitter, rear totally diffused cells.

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Photovoltaics, IEEE Journal of  (Volume:4 ,  Issue: 1 )