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Automated analysis of MOS-C relaxation time for WLR testing

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2 Author(s)
Monroe, D.K. ; Reliability Phys. Dept., Sandia Nat. Labs., Albuquerque, NM, USA ; Swanson, S.E.

Summary form only given. The relaxation time of a metal oxide semiconductor capacitor (MOS-C) is the time required for the restoration of thermal equilibrium, after being pulsed into deep depletion. Relaxation time has become widely used for monitoring wafer processing, because it is sensitive to the presence of contaminants. This paper describes and compares two automated techniques for analysis of capacitor relaxation-time data to determine the mean generation lifetime, τg, for electron-hole pairs. The first technique is an enhanced version of an existing method, while the second is a new technique that requires much less data processing and is much more reliable as an automated analysis tool

Published in:

Integrated Reliability Workshop Final Report, 1997 IEEE International

Date of Conference:

13-16 Oct 1997