By Topic

Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Jaekyun Kim ; Samsung Adv. Inst. of Technol., Samsung Electron. Co., Yongin, South Korea ; Joosung Kim ; Youngjo Tak ; Suhee Chae
more authors

We report the effect of V-shaped pit size, inverted hexagonal pits embedded in InGaN multiple quantum well, on the reverse leakage current of InGaN light-emitting diodes (LEDs). It was found that the reverse leakage current of InGaN LEDs with larger V-shaped pits is significantly reduced from 1.80 mA down to 3.84 nA at -30 V by several orders of magnitude. We claim that this improvement is accounted for increased Poole-Frenkel barrier height of carrier trapped at the deep centers via enlarged V-pit formation, consequently resulting in lower reverse current of InGaN LEDs.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 11 )