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Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

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6 Author(s)
Jaekyun Kim ; Samsung Adv. Inst. of Technol., Samsung Electron. Co., Yongin, South Korea ; Joosung Kim ; Youngjo Tak ; Suhee Chae
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We report the effect of V-shaped pit size, inverted hexagonal pits embedded in InGaN multiple quantum well, on the reverse leakage current of InGaN light-emitting diodes (LEDs). It was found that the reverse leakage current of InGaN LEDs with larger V-shaped pits is significantly reduced from 1.80 mA down to 3.84 nA at -30 V by several orders of magnitude. We claim that this improvement is accounted for increased Poole-Frenkel barrier height of carrier trapped at the deep centers via enlarged V-pit formation, consequently resulting in lower reverse current of InGaN LEDs.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 11 )

Date of Publication:

Nov. 2013

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