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Influence of Implantation Damages and Intrinsic Dislocations on Phosphorus Diffusion in Ge

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7 Author(s)
Yujiao Ruan ; Dept. of Phys., Xiamen Univ., Xiamen, China ; Chengzhao Chen ; Shihao Huang ; Wei Huang
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Influence of the implant-induced damages and the threading dislocations during germanium (Ge) epitaxy was investigated on the phosphorus diffusion in Ge. An adequate n-type junction was formed by 650°C rapid thermal annealing of the implanted bulk Ge. It is observed that for epitaxial Ge on Si substrate, there was an enhanced local phosphorus diffusion approaching the Ge/Si interface. A diffusion model considering the enhancement by defects is proposed to sufficiently explain the phosphorus diffusion profiles in Ge. The intrinsic dislocation-enhanced phosphorus diffusivity found at least three orders of magnitude larger than that in the absence of dislocations.

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Electron Devices, IEEE Transactions on  (Volume:60 ,  Issue: 11 )