GaN-based VCSEL fabricated on nonpolar GaN substrates

The vertical cavity surface emitting laser diode (VCSEL) was fabricated using nonpolar GaN substrates. The direction of the polarization of the lasing was along a-axis. The emission wavelength was 412nm and the threshold current was 80mA using 10 μm aperture. The selective etching was used to make a short cavity of the VCSELS.