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Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits

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6 Author(s)
Weatherford, T.R. ; Naval Postgraduate Sch., Monterey, CA, USA ; Marshall, P.W. ; Marshall, C.J. ; Fouts, D.J.
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Heavy-ion Single Event Effects (SEE) test results reveal the roles of growth temperature and buffer layer thickness in the use of a low-temperature grown GaAs (LT GaAs) buffer layer for suppressing SEE sensitivity in GaAs HIGFET circuits

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Nuclear Science, IEEE Transactions on  (Volume:44 ,  Issue: 6 )