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Pion-induced soft upsets in 16 mbit DRAM chips

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4 Author(s)
Gelderloos, C.J. ; Nucl. Phys. Lab., Colorado Univ., Boulder, CO, USA ; Peterson, R.J. ; Nelson, M.E. ; Ziegler, J.F.

Measurements of the soft upset cross section due to energetic charged pions were made in various 16 Mbit memory chips, as a function of incident pion energy and for chips with different cell technologies. Significant differences are seen to exist between cell technologies, up to a factor of 1000 in cross section. Upset cross sections are reported that exhibit proportionality to the reaction cross section for pions on silicon, including the well-known enhancement over proton and neutron cross sections near the delta resonance. Implications of this enhancement for pion-induced upsets due to cosmic ray fluxes are discussed

Published in:

Nuclear Science, IEEE Transactions on  (Volume:44 ,  Issue: 6 )

Date of Publication:

Dec 1997

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