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Heavy ion and proton-induced single event multiple upset

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10 Author(s)
Reed, R.A. ; Naval Res. Lab., Washington, DC, USA ; Carts, M.A. ; Marshall, P.W. ; Marshall, C.J.
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Individual ionizing heavy ion events are shown to cause two or more adjacent memory cells to change logic states in a high density CMOS SRAM. A majority of the upsets produced by normally incident heavy ions are due to single-particle events that causes a single cell to upset. However, for grazing angles a majority of the upsets produced by heavy-ion irradiation are due to single-particle events that cause two or more cells to change logic states. Experimental evidence of a single proton-induced spallation reaction that causes two adjacent memory cells to change logic states is presented. Results from a dual volume Monte-Carlo simulation code for proton-induced single-event multiple upsets are within a factor of three of experimental data for protons at normal incidence and 70 degrees

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Nuclear Science, IEEE Transactions on  (Volume:44 ,  Issue: 6 )