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Total-dose and SEU characterization of 0.25 micron CMOS/SOI integrated circuit memory technologies

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7 Author(s)
C. Brothers ; Phillips Lab., Space Mission Technol. Div., Kirtland AFB, NM, USA ; R. Pugh ; P. Duggan ; J. Chavez
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Total-dose and single-event-effect radiation characterization of 0.25 micron test macro SRAMs fabricated at IBM's East Fishkill research foundry in un-hardened bulk and un-hardened partially-depleted SOI silicon, are reported. The design and fabrication process were optimized for high-performance and short access time using supply voltages of 2.5 V for the 64 K-bit and 1.8 V for the 144 K and 288 K-bit test macro SRAMs

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IEEE Transactions on Nuclear Science  (Volume:44 ,  Issue: 6 )