Referenced Items are not available for this document.
Total-dose and single-event-effect radiation characterization of 0.25 micron test macro SRAMs fabricated at IBM's East Fishkill research foundry in un-hardened bulk and un-hardened partially-depleted SOI silicon, are reported. The design and fabrication process were optimized for high-performance and short access time using supply voltages of 2.5 V for the 64 K-bit and 1.8 V for the 144 K and 288 K-bit test macro SRAMs
Published in:
Nuclear Science, IEEE Transactions on
(Volume:44
,
Issue:
6
)
Date of Publication: Dec 1997
- Page(s):
- 2134 - 2139
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 5804592
- Digital Object Identifier :
- 10.1109/23.659028
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1997
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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