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Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOXTM substrates

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7 Author(s)
S. T. Liu ; Honeywell Inc., Plymouth, MN, USA ; L. P. Allen ; M. J. Anc ; W. C. Jenkins
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Excessive total dose radiation induced back channel threshold voltage shifts often observed in fully depleted and partially depleted NMOS transistors fabricated in full dose SIMOX wafers can be greatly reduced by use of new low dose ADVANTOXTM substrates

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IEEE Transactions on Nuclear Science  (Volume:44 ,  Issue: 6 )