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Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices

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8 Author(s)
F. Saigne ; Centre d'Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France ; L. Dusseau ; J. Fesquet ; J. Gasiot
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A new method for accelerated prediction of the long-term thermal annealing of bulk oxide trapped charge in the low dose rate space environment was presented in a previous paper. This method, based on the thermal detrapping characteristics is briefly reviewed. From a single experimental isochronal curve, the long term isothermal behavior of the device is predicted and compared with an experimental isothermal curve. Four different devices, obtained from four different manufacturers, were examined to demonstrate the validity of this method. In all four cases, the predicted long-term thermal behavior is in good agreement with experimental results. This method's application is discussed for space missions

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IEEE Transactions on Nuclear Science  (Volume:44 ,  Issue: 6 )