Cart (Loading....) | Create Account
Close category search window

Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Saigne, F. ; Centre d''Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France ; Dusseau, L. ; Fesquet, J. ; Gasiot, J.
more authors

A new method for accelerated prediction of the long-term thermal annealing of bulk oxide trapped charge in the low dose rate space environment was presented in a previous paper. This method, based on the thermal detrapping characteristics is briefly reviewed. From a single experimental isochronal curve, the long term isothermal behavior of the device is predicted and compared with an experimental isothermal curve. Four different devices, obtained from four different manufacturers, were examined to demonstrate the validity of this method. In all four cases, the predicted long-term thermal behavior is in good agreement with experimental results. This method's application is discussed for space missions

Published in:

Nuclear Science, IEEE Transactions on  (Volume:44 ,  Issue: 6 )

Date of Publication:

Dec 1997

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.