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Neutron radiation tolerance of advanced UHV/CVD SiGe HBT BiCMOS technology

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5 Author(s)
J. M. Roldan ; Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA ; W. E. Ansley ; J. D. Cressler ; S. D. Clark
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The effects of 1.0 MeV neutron irradiation on both SiGe heterojunction bipolar transistors (HBTs) and Si CMOS transistors from an advanced ultra high vacuum chemical vapour deposition (UHV/CVD) SiGe BiCMOS technology are examined for the first time over the temperature range of 300 K to 84 K. Results at 300 K indicate that this SiGe technology is robust with respect to neutron radiation. At fluences as high as 1015 n/cm2 (1.0 MeV equivalent) the devices exhibited a degradation of less than 30% in peak current gain. The SiGe HBTs maintain a current gain of 60 after 1015 n/cm 2 at 84 K, compared to the Si BJT which degrades with cooling to a current gain of 20 at 84 K. The cutoff frequencies of both the Si and SiGe transistors are unaffected by neutron irradiation, and only a slight degradation in the maximum oscillation frequency of the transistors was observed

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IEEE Transactions on Nuclear Science  (Volume:44 ,  Issue: 6 )