Referenced Items are not available for this document.
200 MeV proton damage effects on multi-quantum well GaAs/GaAlAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10-15 cm2/p for different bias conditions and from 1.52 to 3.58×10-15 cm2 /p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at Ibias=35 mA
Published in:
Nuclear Science, IEEE Transactions on
(Volume:44
,
Issue:
6
)
Date of Publication: Dec 1997
- Page(s):
- 1898 - 1905
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 5804563
- Digital Object Identifier :
- 10.1109/23.658959
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1997
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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