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200 MeV proton damage effects on multi-quantum well laser diodes

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5 Author(s)
Zhao, Y.F. ; Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA ; Patwary, A.R. ; Schrimpf, R.D. ; Neifeld, M.A.
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200 MeV proton damage effects on multi-quantum well GaAs/GaAlAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10-15 cm2/p for different bias conditions and from 1.52 to 3.58×10-15 cm2 /p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at Ibias=35 mA

Published in:

Nuclear Science, IEEE Transactions on  (Volume:44 ,  Issue: 6 )

Date of Publication:

Dec 1997

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