By Topic

Integrity of III-V heterojunction interfaces under gamma irradiation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
S. Subramanian ; Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA ; A. Sarkar ; L. Ungier ; S. M. Goodnick

Reliability of modern III-V semiconductor heterostructure devices meant for strong radiation environment depends upon the integrity of the hetero-interfaces under radiation. In this paper, we present some results of our investigation of a variety of heterojunction structures subjected to gamma irradiation up to 40 Mrads (Si) probed by Hall, C-V and photoluminescence measurements

Published in:

IEEE Transactions on Nuclear Science  (Volume:44 ,  Issue: 6 )