By Topic

Quantitative model of radiation induced charge trapping in SiO2

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
J. F. Conley ; Dept. of Commercial Syst., Dynamics Res. Corp., Beaverton, OR, USA ; P. M. Lenahan ; B. D. Wallace ; P. Cole

A predictive model of radiation induced oxide charging, thermodynamics and electron spin resonance measurements of defects known as E' centers, has been developed. The model is successfully tested on 60Co irradiated MOSFETs

Published in:

IEEE Transactions on Nuclear Science  (Volume:44 ,  Issue: 6 )