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Microscopic structure of the E'δ center in amorphous SiO2: A first principles quantum mechanical investigation

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8 Author(s)
Chavez, J.R. ; Phillips Lab., Kirtland AFB, NM, USA ; Karna, S.P. ; Vanheusden, K. ; Brothers, C.P.
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Radiation induced defect creation or revelation in metal oxide-semiconductor (MOS) field effect transistors (FET) or bipolar structures remains a hazard for devices exposed to hostile environments such as those encountered in space. Certainly for MOSFETs and to some degree for bipolar transistors, defects generated in thin, amorphous SiO 2 layers are of prime concern. Despite extensive experimental studies one can reasonably say that a complete theoretical description of any point defect in SiO2 is lacking. We report the first ab initio quantum mechanical investigation of the structure of the E' δ center in amorphous SiO2 (a-SiO2). Our calculations suggest that the unpaired electron is shared by only two Si atoms, irrespective of the Si cluster size

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Nuclear Science, IEEE Transactions on  (Volume:44 ,  Issue: 6 )