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Analytical results have been presented for an optically illuminated InAlAs/InGaAs/InP MODFET with an opaque gate. Partial depletion of the active region is considered. The excess carriers due to photo generation are obtained by solving the continuity equation. The energy levels are modified due to the generation of carriers. The surface recombination effect has also been taken into account. The results of I-V characteristics have been compared under dark conditions, since under illumination experimental results are not available. The offset voltage, sheet concentration, I-V, and transconductance have been presented and the effect of illumination discussed
Published in:
Electron Devices, IEEE Transactions on
(Volume:45
,
Issue:
1
)
Date of Publication: Jan 1998
- Page(s):
- 68 - 77
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5811975
- Digital Object Identifier :
- 10.1109/16.658813
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jan 1998
- Sponsored by :
- IEEE Electron Devices Society
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