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Studying Light-Induced Degradation by Lifetime Decay Analysis: Excellent Fit to Solution of Simple Second-Order Rate Equation

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6 Author(s)
Naerland, T.U. ; Dept. of Solar Energy, Inst. for Energy Technol., Kjeller, Norway ; Haug, H. ; Angelskar, H. ; Sondena, R.
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Twenty different boron-doped Czochralski silicon materials have been analyzed for light-induced degradation. The carrier lifetime degradation was monitored by an automated quasi-steady-state photoconductance setup with an externally controlled bias lamp for in-situ illumination between measurements. Logarithmic plots of the time-resolved lifetime decays clearly displayed the previously reported rapid and slow decays, but a satisfactory fit to a single exponential function could not be achieved. We found, however, that both decay curves, for all the investigated samples, can be fitted very well to the solution of a simple second-order rate equation. This indicates that the defect generation process can be described by second-order reaction kinetics. The new information is used to discuss the role of holes in the defect reaction and the rate-determining steps of the rapid and slow defect reactions.

Published in:

Photovoltaics, IEEE Journal of  (Volume:3 ,  Issue: 4 )

Date of Publication:

Oct. 2013

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