By Topic

Studying Light-Induced Degradation by Lifetime Decay Analysis: Excellent Fit to Solution of Simple Second-Order Rate Equation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Naerland, T.U. ; Dept. of Solar Energy, Inst. for Energy Technol., Kjeller, Norway ; Haug, H. ; Angelskar, H. ; Sondena, R.
more authors

Twenty different boron-doped Czochralski silicon materials have been analyzed for light-induced degradation. The carrier lifetime degradation was monitored by an automated quasi-steady-state photoconductance setup with an externally controlled bias lamp for in-situ illumination between measurements. Logarithmic plots of the time-resolved lifetime decays clearly displayed the previously reported rapid and slow decays, but a satisfactory fit to a single exponential function could not be achieved. We found, however, that both decay curves, for all the investigated samples, can be fitted very well to the solution of a simple second-order rate equation. This indicates that the defect generation process can be described by second-order reaction kinetics. The new information is used to discuss the role of holes in the defect reaction and the rate-determining steps of the rapid and slow defect reactions.

Published in:

Photovoltaics, IEEE Journal of  (Volume:3 ,  Issue: 4 )