By Topic

Insulator passivation of In0.2Ga0.8As-GaAs surface quantum wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Passlack, M. ; AT&T Bell Labs., Murray Hill, NJ, USA ; Hong, M. ; Harris, T.D. ; Mannaerts, J.P.
more authors

The electronic passivation of (100) In0.2Ga0.8 As-GaAs surface quantum wells (QWs) using in situ deposition of an amorphous, insulating Ga2O3 film has been investigated and compared to standard Al0.45Ga0.55As passivation. Nonradiative lifetimes τr=1.1±0.2 and 1.2±0.2 ns have been inferred from the dependence of the internal quantum efficiency η on optical excitation density P0' for the Ga2O3 and Al0.45Ga0.55As passivated In0.02 Ga0.8As-GaAs surface QW, respectively. Beyond identical internal quantum efficiency, the amorphous Ga2O3 insulator passivation simplifies device processing, eludes problems arising from lattice-mismatched interfaces, and virtually eliminates band bending in electronic and optoelectronic devices based on a low dimensional system such as quantum wells, wires, and dots

Published in:

Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 2 )