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Flexible High- \kappa /Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) Fabric

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4 Author(s)
Rojas, J.P. ; Electr. Eng. Program, King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia ; Ghoneim, M.T. ; Young, C.D. ; Hussain, M.M.

Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 cm2 and thickness: 25 μm) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections.

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Electron Devices, IEEE Transactions on  (Volume:60 ,  Issue: 10 )