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Er3+-doped Al2O3 thin films by plasma-enhanced chemical vapor deposition (PECVD) exhibiting a 55-nm optical bandwidth

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2 Author(s)
Chryssou, C.E. ; Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK ; Pitt, C.W.

We report the first deposition of Er3+-doped aluminum oxide thin-film optical waveguides by plasma-enhanced chemical vapor deposition (PECVD). The aluminum and erbium precursors used for the deposition of the thin films were trimethyl-aluminum and Er tri-chelate of 2,2,6,6-tetramethylheptane-3,5 dione respectively. The samples show broad, room-temperature photoluminescence at λ=1.533 μm. The Er3+ concentration ranged from 0.01-0.2 at%. The full width half maximum (FWHM) of the Er3+ emission spectrum is 55 nm, considerably broader than in silica glass. The radiative lifetime has been measured at 50-mW pump power

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Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 2 )