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Low-drive-voltage MQW electroabsorption modulator for optical short-pulse generation

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3 Author(s)
Oshiba, S. ; Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan ; Nakamura, K. ; Horikawa, H.

This paper reports on InGaAsP-InGaAsP tensile strained MQW electroabsorption (EA) modulators with a high modulation efficiency of 35 GHz/V that generate optical short pulses. We studied and optimized the multiple-quantum-well (MQW) structural parameters, barrier height, and well number, thickness, and strain in the absorption layer to ensure high attenuation efficiency and generate low duty cycle pulses. Low TE/TM polarization sensitivity was obtained by controlling strain. Stable, nearly transform-limited optical pulse trains with a narrow pulsewidth of 3.6 ps are generated by applying a 20-GHz sinusoidal modulation voltage (6 Vpp) to the EA modulator. This achieves a very small pulse duty cycle of 7.2%

Published in:

Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 2 )