By Topic

LD optical switch with polarization insensitivity over a wide wavelength range

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
Takeshita, T. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Yoshino, K. ; Ito, T. ; Lui, W.W.
more authors

A double-heterostructure (DH) laser with TM mode lasing has been achieved with a narrow active-layer width, and a laser-diode optical switch (LDSW) module with less than a 0.35-dB gain difference between the TE and TM modes over a wide wavelength range has been constructed by introducing a square bulk active layer formed by dry etching and regrowth. The polarization-insensitive width of a 0.3-μm-thick DH laser is clarified to be between 0.30 and 0.35 μm, since the 0.30- and 0.35-μm-wide DH lasers lase in the TM mode and TE mode, respectively. The polarization-insensitive width of the fabricated 0.3-μm-thick LDSW is estimated to be about 0.32 μm for the fabricated LDSW with a trapezoidal active layer by measuring the single-pass gain and the gain difference between the TE and TM modes. This must be to within 0.01 μm. A 0.35-μm-wide, 300-μm-long LDSW module has lossless gain in the wavelength range of 1.31 to 1.36 μm at 20 mA. The gain difference between the TE and TM modes is as low as 0.35 dB, The rise and fall times are 1.0 and 0.55 ns, respectively. The bulk active-layer LDSW module is promising for use as a polarization-insensitive optical-gate switch in optical information systems

Published in:

Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 2 )