By Topic

Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Rieh, J.-S. ; Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA ; Qasaimeh, O. ; Lu, L.-H. ; Yang, K.
more authors

Monolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single- and dual-feedback configurations, have been designed, fabricated, and characterized. The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dBΩ and 3.2 GHz, respectively. The dual-feedback version exhibits improved gain and bandwidth of 47.4 dBΩ and 3.3 GHz, respectively. Their performance characteristics are excellent in terms of their application in communication systems

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:8 ,  Issue: 2 )