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Analytical transient response and propagation delay evaluation of the CMOS inverter for short-channel devices

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3 Author(s)
Bisdounis, L. ; Dept. of Electr. & Comput. Eng., Patras Univ., Greece ; Nikolaidis, S. ; Koufopavlou, O.

In this paper an accurate, analytical model for the evaluation of the CMOS inverter transient response and propagation delay for short-channel devices is presented. An exhaustive analysis of the inverter operation is provided which results in accurate expressions of the output response to an input ramp. Most of the factors which influence the inverter operation are taken into account. The α-power law MOS model, which considers the carriers' velocity saturation effects of short-channel devices, is used. The final results are in excellent agreement with SPICE simulations

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Solid-State Circuits, IEEE Journal of  (Volume:33 ,  Issue: 2 )