By Topic

Monolithic feedback low noise X-band amplifiers using 0.5-μm GaAs MESFETs: comparative theoretical study and experimental characterization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Young-Jin Jeon ; Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea ; Man-Young Jeon ; Jin-Myung Kim ; Yoon-Ha Jeong
more authors

Three different feedback low-noise-amplifier (LNA) circuit topologies for simultaneous noise and power matching are theoretically investigated and compared for the X-band application. The smallest minimum noise figure (NFmin) is shown to be achieved by the common source parallel feedback (CSPF) topology, while the common source series feedback (CSSF) topology exhibits the best overall performance. Experimentally, a CSSF three-stage LNA has been fabricated using 0.5-μm-gate GaAs MESFETs and systematically characterized. In this LNA circuit, an optimal series feedback for noise figure, gain, and stability is implemented via a proper choice of the short stub length. The size of the fabricated monolithic microwave integrated LNA chip is only 1 mm2/stage. The measured gain varies from 22.0 to 23.0 dB in the frequency range of 8 to 10 GHz, with good flatness. The input/output voltage standing wave ratios are less than 2 and 1.43, respectively. The noise figure of the three-stage LNA is less than 2.6 dB. These measured data are sufficient for practical applications and are also in good agreement with simulated results

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:33 ,  Issue: 2 )