By Topic

Cosmic ray soft error rates of 16-Mb DRAM memory chips

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Ziegler, J.F. ; IBM-Res., Yorktown Heights, NY, USA ; Nelson, M.E. ; Shell, J.D. ; Peterson, R.J.
more authors

Manufactured 16-Mb DRAM memory chips use three different cell technologies for bit storage: stacked capacitors, trenches with internal charge, and trenches with external charge. We have measured the soft fail probability of 26 different 16-Mb chips produced by nine vendors to evaluate whether the different cell technologies have an impact on the chip soft error rate. This testing involved irradiation with neutrons, protons, and pions, the principle hadrons of terrestrial cosmic rays. The results show clear differences in soft-fail sensitivity, which appears to be related to the cell structure

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:33 ,  Issue: 2 )