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SIMON-A simulator for single-electron tunnel devices and circuits

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3 Author(s)
Wasshuber, C. ; Inst. for Microelectron., Tech. Univ. Wien, Austria ; Kosina, H. ; Selberherr, S.

SIMON is a single electron tunnel device and circuit simulator that is based on a Monte Carlo method. It allows transient and stationary simulation of arbitrary circuits consisting of tunnel junctions, capacitors, and voltage sources of three kinds: constant, piecewise linearly time dependent, and voltage controlled. Cotunneling can be simulated either with a plain Monte Carlo method or with a combination of the Monte Carlo and master equation approach. A graphic user interface allows the quick and easy design of circuits with single-electron tunnel devices. Furthermore, as an example of the usage of SIMON, we discuss the essential problem of random background charge and present possible solutions

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:16 ,  Issue: 9 )