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Ge/Si quantum dots thin film solar cells

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9 Author(s)
Liu, Zhi ; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China ; Zhou, Tianwei ; Li, Leliang ; Zuo, Yuhua
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Thin film p-i-n solar cells (SCs) with 30 bilayers undoped or p-type self-assembled Ge/Si quantum dots (QDs) were fabricated on n+-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. Compared with the SCs without Ge QDs, the external quantum efficiency in infrared region and the short-circuit current densities of the SCs with Ge QDs increased. However, their open-circuit voltages and efficiencies decreased. The open circuit voltages of p-type Ge/Si QDs SCs recovered significantly at low temperature, which was due to the suppression of recombination centers and longer carrier lifetime.

Published in:

Applied Physics Letters  (Volume:103 ,  Issue: 8 )

Date of Publication:

Aug 2013

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